IGBT modul 2MBi75VA-120-50 N-kanálový 75 A 1200 V, M263, počet kolíků: 7 Sériové zapojení
Technické dokumenty
Špecifikácie
Brand
Fuji ElectricDauer-Kollektorstrom max.
75 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
390 W
Gehäusegröße
M263
Konfigurace
Series
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Series
Abmessungen
94 x 34 x 30mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT moduly 2-Pack, Fuji Electric
Řada V, externí zastavení 6. Generace
Řada U/U4, Field-Stop 5. Generace
Řada S, 4. Generace NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Technické dokumenty
Špecifikácie
Brand
Fuji ElectricDauer-Kollektorstrom max.
75 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
390 W
Gehäusegröße
M263
Konfigurace
Series
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Series
Abmessungen
94 x 34 x 30mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT moduly 2-Pack, Fuji Electric
Řada V, externí zastavení 6. Generace
Řada U/U4, Field-Stop 5. Generace
Řada S, 4. Generace NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products