IGBT ISL9V3040D3ST N-kanálový 21 A 300 V, DPAK (TO-252), počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
21 A
Maximální napětí emitoru/kolektoru
300 V
Maximální napětí řídicí elektroda/emitor
±10V
Maximální ztrátový výkon
150 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
6.73 x 6.22 x 2.39mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 75,10
€ 1,502 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
50
€ 75,10
€ 1,502 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
50
Kúpiť hromadne
| množstvo | Jednotková cena | Cievka |
|---|---|---|
| 50 - 95 | € 1,502 | € 7,51 |
| 100 - 495 | € 1,302 | € 6,51 |
| 500 - 995 | € 1,144 | € 5,72 |
| 1000+ | € 1,04 | € 5,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
21 A
Maximální napětí emitoru/kolektoru
300 V
Maximální napětí řídicí elektroda/emitor
±10V
Maximální ztrátový výkon
150 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
6.73 x 6.22 x 2.39mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products