MOSFET NTD2955-1G P-kanálový 12 A 60 V, IPAK (TO-251), počet kolíků: 3 Jednoduchý Si
Technické dokumenty
Špecifikácie
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Podrobnosti o výrobku
Napájecí MOSFET s kanálem P, 30 V až 500 V, on Semiconductor
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P.O.A.
Each (In a Pack of 10) (bez DPH)
Štandardný
10
P.O.A.
Each (In a Pack of 10) (bez DPH)
Štandardný
10
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
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Technické dokumenty
Špecifikácie
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Podrobnosti o výrobku
Napájecí MOSFET s kanálem P, 30 V až 500 V, on Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products