IGBT modul SKM150GAL12T4 N-kanálový 232 A 1200 V, SEMITRANS2, počet kolíků: 5 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
SemikronDauer-Kollektorstrom max.
232 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
SEMITRANS2
Konfigurace
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
5
Konfigurace tranzistoru
Single
Betriebstemperatur max.
175 °C
Abmessungen
94 x 34 x 30.1mm
Betriebstemperatur min.
-40 °C
Breite
34mm
Podrobnosti o výrobku
Jednotlivé moduly IGBT
Semikron nabízí moduly IGBT (Insuleded Gate Bipolar Transistor) v baleních SEMITRANS, SEmiX a SEMITOP v různých topologiích, proudovém a napěťovém hodnocení.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 61,01
Each (bez DPH)
1
€ 61,01
Each (bez DPH)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
SemikronDauer-Kollektorstrom max.
232 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
SEMITRANS2
Konfigurace
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
5
Konfigurace tranzistoru
Single
Betriebstemperatur max.
175 °C
Abmessungen
94 x 34 x 30.1mm
Betriebstemperatur min.
-40 °C
Breite
34mm
Podrobnosti o výrobku
Jednotlivé moduly IGBT
Semikron nabízí moduly IGBT (Insuleded Gate Bipolar Transistor) v baleních SEMITRANS, SEmiX a SEMITOP v různých topologiích, proudovém a napěťovém hodnocení.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products