Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsTyp tranzistoru
PNP
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-32
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximální zbytkový proud kolektoru
0.2mA
Height
10.8mm
Abmessungen
7.8 x 2.7 x 10.8mm
Maximální pracovní teplota
+150 °C
Länge
7.8mm
Breite
2.7mm
Minimum Operating Temperature
-65 °C
Podrobnosti o výrobku
PnP Darlington Transistory, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informácie o zásobách sú dočasne nedostupné.
P.O.A.
Výrobné balenie (Tuba)
1
P.O.A.
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Tuba)
1
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsTyp tranzistoru
PNP
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-32
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximální zbytkový proud kolektoru
0.2mA
Height
10.8mm
Abmessungen
7.8 x 2.7 x 10.8mm
Maximální pracovní teplota
+150 °C
Länge
7.8mm
Breite
2.7mm
Minimum Operating Temperature
-65 °C
Podrobnosti o výrobku
PnP Darlington Transistory, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


