Renesas Electronics Tranzistor Darlington BD679 1 4 A NPN 80 V HFE:750, SOT-32, počet kolíků: 3 kolíkový

Skladové číslo RS: 109-084PZnačka: MagnatecČíslo dielu výrobcu: BD679
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Technické dokumenty

Špecifikácie

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

4A

Maximum Collector Emitter Voltage Vceo

80V

Package Type

SOT-32

Mount Type

Through Hole

Pinanzahl

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

750

Polarita tranzistoru

NPN

Maximum Emitter Base Voltage VEBO

5V

Minimum Operating Temperature

-65°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Collector Base Voltage VCBO

80V

Maximální pracovní teplota

150°C

Height

10.8mm

Länge

7.8mm

Normy/schválení

No

Řada

BD679

Maximální zbytkový proud kolektoru

0.2mA

Automotive Standard

No

Podrobnosti o výrobku

NPN Darlington Transistory, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Informácie o zásobách sú dočasne nedostupné.

P.O.A.

Renesas Electronics Tranzistor Darlington BD679 1 4 A NPN 80 V HFE:750, SOT-32, počet kolíků: 3 kolíkový
Vyberte typ balenia

P.O.A.

Renesas Electronics Tranzistor Darlington BD679 1 4 A NPN 80 V HFE:750, SOT-32, počet kolíků: 3 kolíkový

Informácie o zásobách sú dočasne nedostupné.

Vyberte typ balenia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technické dokumenty

Špecifikácie

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

4A

Maximum Collector Emitter Voltage Vceo

80V

Package Type

SOT-32

Mount Type

Through Hole

Pinanzahl

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

750

Polarita tranzistoru

NPN

Maximum Emitter Base Voltage VEBO

5V

Minimum Operating Temperature

-65°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Collector Base Voltage VCBO

80V

Maximální pracovní teplota

150°C

Height

10.8mm

Länge

7.8mm

Normy/schválení

No

Řada

BD679

Maximální zbytkový proud kolektoru

0.2mA

Automotive Standard

No

Podrobnosti o výrobku

NPN Darlington Transistory, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more