Renesas Electronics Tranzistor Darlington 1 4 A NPN 80 V HFE:750, SOT-32, počet kolíků: 3 kolíkový
Technické dokumenty
Špecifikácie
Brand
Renesas ElectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
4A
Maximum Collector Emitter Voltage Vceo
80V
Package Type
SOT-32
Mount Type
Through Hole
Pinanzahl
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
750
Maximum Collector Base Voltage VCBO
80V
Polarita tranzistoru
NPN
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximální pracovní teplota
150°C
Normy/schválení
No
Řada
BD679
Height
10.8mm
Länge
7.8mm
Maximální zbytkový proud kolektoru
0.2mA
Automotive Standard
No
Podrobnosti o výrobku
NPN Darlington Transistory, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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Informácie o zásobách sú dočasne nedostupné.
€ 15,84
€ 0,317 Each (In a Tube of 50) (bez DPH)
50
€ 15,84
€ 0,317 Each (In a Tube of 50) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
50
| Množstvo | Jednotková cena | Tuba |
|---|---|---|
| 50 - 50 | € 0,317 | € 15,84 |
| 100 - 200 | € 0,301 | € 15,05 |
| 250 - 450 | € 0,285 | € 14,26 |
| 500+ | € 0,269 | € 13,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
Renesas ElectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
4A
Maximum Collector Emitter Voltage Vceo
80V
Package Type
SOT-32
Mount Type
Through Hole
Pinanzahl
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
750
Maximum Collector Base Voltage VCBO
80V
Polarita tranzistoru
NPN
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximální pracovní teplota
150°C
Normy/schválení
No
Řada
BD679
Height
10.8mm
Länge
7.8mm
Maximální zbytkový proud kolektoru
0.2mA
Automotive Standard
No
Podrobnosti o výrobku
NPN Darlington Transistory, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products