řada: TC6320 Pole MOSFET TC6320K6-G P-kanál, N kanál-kanálový 2 A 200 V, VDFN, počet kolíků: 8 kolíkový Microchip

The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

• Low threshold
• Low on resistance
• Low input capacitance
• Fast switching speeds
• Free from secondary breakdown
• Low input and output leakage