ROHM Schottkyho dioda a usměrňovač SCS230ANTRL Schottkyho SiC 30 A 1200 V, počet kolíků: 2 kolíkový

The ROHM Schottky Barrier Diode is engineered for high-performance applications, delivering superior efficiency and reliability in power conversion systems. By utilising advanced silicon carbide technology, this diode offers a peak reverse voltage of 650V, making it ideal for demanding environments in applications such as factory automation, photovoltaic power conditioning, and electric vehicle charging. Its low forward voltage drop and negligible recovery time ensure minimal energy loss, thus enhancing the overall performance and longevity of your circuits. The robust thermal characteristics support high current ratings, complemented by a wide creepage distance, assuring reliable operation even at elevated temperatures.

• Low forward voltage facilitates reduced energy losses during operation
• Negligible recovery time and current support efficient switching behaviour
• Rated for a peak reverse voltage of 650V ensuring robust performance
• With a continuous forward current rating of 30A, it suits high load applications
• Surge current capability allows for transient situations without compromise
• Wide creepage distance of a minimum of 5.10mm enhances insulation and reliability
• PEP capability up to 100A and repetitive current handling secures functional safety.