STMicroelectronics MOSFET MOSFET 1 4 A, počet kolíků: 14 kolíkový 20V, SO-16

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/ns in full temperature range
• Driver current capability: 4 A source/sink
• Switching times 15 ns rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Integrated bootstrap diode
• Comparator for fault protections
• Smart shutdown function
• Adjustable deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Effective fault protection
• Flexible, easy and fast design
• Applications
• Motor driver for home appliances, factory automation, industrial drives and fans
• HID ballasts
• Power supply unit
• Induction heating
• Wireless chargers
• Industrial inverters
• UPS