STMicroelectronics Modul budiče hradla Budič hradla 2 6 A, počet kolíků: 16 kolíkový 5V, SO-16

The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

• Interlocking function
• UVLO on low-side and high-side sections
• Dedicated pin for shut down functionality
• Over temperature protection