STMicroelectronics IGBT STGF10NB60SD Typ N-kanálový 29 A 600 V, TO-220FP, počet kolíků: 3 kolíkový Průchozí otvor 3.8 μs
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-10°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximální pracovní teplota
150°C
Height
10.4mm
Länge
30.6mm
Normy/schválení
RoHS
Řada
Low Drop
Jmenovitá energie
8mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informácie o zásobách sú dočasne nedostupné.
€ 57,20
€ 1,144 Each (Supplied in a Tube) (bez DPH)
Výrobné balenie (Tuba)
50
€ 57,20
€ 1,144 Each (Supplied in a Tube) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Tuba)
50
| Množstvo | Jednotková cena | Tuba |
|---|---|---|
| 50 - 90 | € 1,144 | € 11,44 |
| 100 - 240 | € 1,129 | € 11,29 |
| 250 - 490 | € 1,116 | € 11,16 |
| 500+ | € 1,103 | € 11,03 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-10°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximální pracovní teplota
150°C
Height
10.4mm
Länge
30.6mm
Normy/schválení
RoHS
Řada
Low Drop
Jmenovitá energie
8mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products