STMicroelectronics IGBT Typ N-kanálový 115 A 650 V, TO-247, počet kolíků: 4 kolíkový Průchozí otvor 1 MHz

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
• Excellent switching performance thanks to the extra driving kelvin pin