STMicroelectronics, standard: AEC-Q101 Usměrňovací a Schottkyho diody STPSC20G065WLY Schottkyho dioda 20 A 650 V 0 ns,

The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.

• No reverse recovery charge in application current range
• Switching behaviour independent of temperature
• High forward surge capability