MOSFET STW68N65DM6-4AG Typ N-kanálový 72 A 650 V, TO-247-4 STMicroelectronics, počet kolíků: 4 kolíkový

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.

• Designed for automotive applications
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Excellent switching performance thanks to the extra driving source pin
• Zener-protected